BT149G,412 datasheet

Маркировка

BT149G,412
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BT149G,412 Breakover Current Ibo Max: 9 A Current - Gate Trigger (igt) (max): 200?µA Current - Hold (ih) (max): 5mA Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A Current - Off State (max): 100?µA Current - On State (it (av)) (max): 500mA Current - On State (it (rms) (max): 800mA Current - On State (it (rms)) (max): 800mA Forward Voltage Drop: 1.25 V Gate Trigger Current (igt): 50 uA Gate Trigger Voltage (vgt): 0.3 V Holding Current (ih Max): 5 mA ID_COMPONENTS: 1948240 Maximum Gate Peak Inverse Voltage: 5 V Mounting Style: Through Hole Mounting Type: Through Hole Off-state Leakage Current @ Vdrm Idrm: 0.05 mA On-state Rms Current (it Rms): 0.8 A Package / Case: TO-92-3 (Standard Body), TO-226 Rated Repetitive Off-state Voltage Vdrm: 600 V Scr Type: Sensitive Gate Voltage - Gate Trigger (vgt) (max): 800mV Voltage - Off State: 600V Voltage - On State (vtm) (max): 1.7V Other Names: 568-3672, 933998440412, BT149G
Количество страниц

12 шт.
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